Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
CEP50N06 |
Click to view a larger image
| Part Number | CEP50N06 |
| Manufacturer | CET |
| Description | N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability... |
| Features |
60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEP50N06/CEB50N06
D
D
G
G D S
S CEB SERIES TO-263(DD-PAK)
G
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 60
Units V V A A W W/ C mJ A C
±20
50 150 131 0.88 225 50 -55 to 175
Maximum Power Dissipation @ TC = 25 ... |
| Document |
 CEP50N06 Data Sheet
PDF 390.06KB |
| Distributor | Stock | Price | Buy |
|---|
