CEP51A3/CEB51A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 48A, RDS(ON) =16.5mΩ @VGS = 10V. RDS(ON) =28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S.
30V, 48A, RDS(ON) =16.5mΩ @VGS = 10V. RDS(ON) =28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30 Units V V A A W W/ C C ±20 48 160 70 0.48 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEP5175 |
CET |
P-Channel MOSFET | |
2 | CEP50N06 |
CET |
N-Channel MOSFET | |
3 | CEP50N10 |
CET |
N-Channel MOSFET | |
4 | CEP50P03 |
CET |
P-Channel MOSFET | |
5 | CEP540A |
CET |
N-Channel MOSFET | |
6 | CEP540L |
CET |
N-Channel MOSFET | |
7 | CEP540N |
CET |
N-Channel MOSFET | |
8 | CEP5710 |
Filtran |
ISDN S-Bus Common Mode Inductor | |
9 | CEP5753 |
Filtran |
CEPT/T1 Common Mode Inductor | |
10 | CEP5756 |
Filtran |
ISDN S-Bus Common Mode Inductor | |
11 | CEP01N6 |
CET |
N-Channel MOSFET | |
12 | CEP01N65 |
CET |
N-Channel MOSFET |