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FDC638APZ |
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| Part Number | FDC638APZ |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain lo... |
| Features |
Max rDS(on) = 43mΩ at VGS = –4.5V, ID = –4.5A Max rDS(on) = 68mΩ at VGS = –2.5V, ID = –3.8A Low gate charge (8nC typical). High performance trench technology for extremely low rDS(on). SuperSOTTM –6 package:small footprint (72% smaller than standard SO –8) low profile (1mm thick). RoHS Compliant General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well... |
| Document |
 FDC638APZ Data Sheet
PDF 398.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC638APZ |
ON Semiconductor |
P-Channel MOSFET |
|
| 2 | FDC638P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 3 | FDC638P |
ON Semiconductor |
P-Channel MOSFET |
|
| 4 | FDC6301N |
Fairchild Semiconductor |
Dual N-Channel / Digital FET |
|
| 5 | FDC6301N |
ON Semiconductor |
Dual N-Channel Digital FET |
|