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IRF513 |
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| Part Number | IRF513 |
| Manufacturer | Harris Corporation |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo... |
| Features |
• 4.9A, and 5.6A, 80V and 100V • rDS(ON) = 0.54Ω and 0.74Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF510 IRF511 IRF512 IRF513 PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB BRAND IRF510 IRF511 IRF512 IRF513 G S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) CAUTION: These de... |
| Document |
 IRF513 Data Sheet
PDF Direct Link |
| Distributor | Stock | Price | Buy |
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