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IRF510 - Inchange Semiconductor

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IRF510 N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF510 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay an.

Features


·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
·DESCRITION
·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±20 V V ID Drain Current-Continuous 5.6 A IDM Drain Current-Single Plused 20 A PD Total Dissipation @TC=25℃ 43 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage T.

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Datasheet IRF510 - Fairchild Semiconductor IRF510

Data Sheet January 2002 IRF510 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon .

Datasheet IRF510 - Vishay IRF510

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized .

Datasheet IRF510 - International Rectifier IRF510

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