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MRF6P3300HR5 |
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| Part Number | MRF6P3300HR5 |
| Manufacturer | Freescale Semiconductor |
| Description | ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effe... |
| Features |
• Characterized with Series Equivalent Large-Signal Impedance Parameters • Internally Matched for Ease of Use • Designed for Push-Pull Operation Only • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3 MRF6P3300HR5 470-860 MHz, 300 W, 32 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 375G-04, STYLE 1 NI-860C3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage Gate-... |
| Document |
 MRF6P3300HR5 Data Sheet
PDF 1.05MB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MRF6P3300HR3 |
Freescale Semiconductor |
N-Channel MOSFET |
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| 2 | MRF6P18190HR6 |
Freescale Semiconductor |
RF Power Field Effect Transistor |
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| 3 | MRF6P21190HR6 |
Freescale Semiconductor |
RF Power Field Effect Transistor |
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| 4 | MRF6P23190HR6 |
Freescale Semiconductor |
RF Power Field Effect Transistor |
|
| 5 | MRF6P24190HR6 |
Freescale Semiconductor |
RF Power Field Effect Transistor |
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