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K4M56163LG |
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| Part Number | K4M56163LG |
| Manufacturer | Samsung semiconductor |
| Description | The K4M56163LG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design al... |
| Features |
• 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) • DQM for masking. • Auto refresh. • • • • 64ms refresh peri... |
| Document |
 K4M56163LG Data Sheet
PDF 139.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4M561633G |
Samsung semiconductor |
4M x 16Bit x 4 Banks Mobile SDRAM |
|
| 2 | K4M56163PE-F1L |
Samsung |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
|
| 3 | K4M56163PE-F90 |
Samsung |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
|
| 4 | K4M56163PE-R |
Samsung |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
|
| 5 | K4M56163PE-RG |
Samsung |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
|