IRGP4063DPBF International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

IRGP4063DPBF

International Rectifier
IRGP4063DPBF
IRGP4063DPBF IRGP4063DPBF
zoom Click to view a larger image
Part Number IRGP4063DPBF
Manufacturer International Rectifier
Description IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature...
Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package C G E n-channel VCES = 600V IC = 48A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65V Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
• Rugged tran...

Document Datasheet IRGP4063DPBF Data Sheet
PDF 345.77KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 IRGP4063D-EPBF
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Datasheet
2 IRGP4063D1-EPBF
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Datasheet
3 IRGP4063D1PBF
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Datasheet
4 IRGP4063-EPBF
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Datasheet
5 IRGP4063PBF
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Datasheet
More datasheet from International Rectifier



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact