SI6955ADQ |
Part Number | SI6955ADQ |
Manufacturer | Vishay (https://www.vishay.com/) Siliconix |
Description | The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under... |
Features |
physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 70550 S-60142Rev. B, 13-Feb-06 www.vishay.com 1
SPICE Device Model Si6955ADQ Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static
Gate Threshold Voltage On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage
a... |
Document |
SI6955ADQ Data Sheet
PDF 298.37KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | Si6953DQ |
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Dual P-Channel 20-V (D-S) MOSFET | |
2 | Si6953DQ |
Fairchild Semiconductor |
Dual 20V P-Channel PowerTrench MOSFET | |
3 | SI6954ADQ |
Vishay Siliconix |
N-Channel MOSFET | |
4 | SI6954DQ |
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Dual N-Channel MOSFET | |
5 | Si6956DQ |
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