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STP19NB20 |
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| Part Number | STP19NB20 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj August 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
I PAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM
2
12
3
Value STP(B)19NB20(-1) 200 200 ± 30 19 12 76 125 1 5.5 –65 to 150 150 (1)ISD ≤ 19 A, di/dt ≤300A/µs,... |
| Document |
 STP19NB20 Data Sheet
PDF 447.76KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP19NB20FP |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 2 | STP19N06 |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 3 | STP19N06FI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 4 | STP19N06L |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
|
| 5 | STP19N06LFI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
|