MT3S37T |
Part Number | MT3S37T |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | www.DataSheet4U.com MT3S37T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S37T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES · · Low Noise Figure :NF=1.2dB (@... |
Features |
· · Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e| =12.0dB (@f=2GHz) 2 Marking 3 Q4 1 2 TESM JEDEC JEITA Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.5 1.5 50 25 100 150 −55~150 Unit V V V mA mA mW °C °C Maximum Ratings (Ta = 25°C) ― ― 2-1B1A TOSHIBA Weight:0.0022g (typ.) 1 2002-08-19 www.DataSheet4U.com MT3S37T Microwave Characteristics (Ta = 25°C) Characteristics Transition Freque... |
Document |
MT3S37T Data Sheet
PDF 149.86KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT3S35T |
Toshiba Semiconductor |
CMOS ST-BUS Family Multiple Rate Digital Switch | |
2 | MT3S36T |
Toshiba Semiconductor |
TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE | |
3 | MT3S38T |
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TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE | |
4 | MT3S03AS |
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SILICON NPN EPITAXIAL PLANAR TYPE | |
5 | MT3S03AT |
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |