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IRFZ24N |
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| Part Number | IRFZ24N |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes ... |
| Features |
very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications.
IRFZ24N
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 17 45 175 70 UNIT V A W ˚C mΩ
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g s
1 23
LIMITING VALUES
Limiting values in accordance with the Ab... |
| Document |
 IRFZ24N Data Sheet
PDF 191.46KB |
| Distributor | Stock | Price | Buy |
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