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Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of a.
• Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRFZ24S, SiHFZ24S)
• Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L)
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for.
IRFZ24L - International Rectifier
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFZ24 |
International Rectifier |
Power MOSFET |
|
| 2 | IRFZ24 |
Fairchild Semiconductor |
Power MOSFET |
|
| 3 | IRFZ24 |
Vishay |
Power MOSFET |
|
| 4 | IRFZ24A |
Fairchild Semiconductor |
ADVANCED POWER MOSFET |
|
| 5 | IRFZ24N |
NXP |
N-channel enhancement mode TrenchMOS transistor |
|
| 6 | IRFZ24N |
International Rectifier |
Power MOSFET |
|
| 7 | IRFZ24N |
ART CHIP |
Power MOSFET |
|
| 8 | IRFZ24N |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | IRFZ24NL |
International Rectifier |
Power MOSFET |
|
| 10 | IRFZ24NL |
TRANSYS |
Power MOSFET |
|
| 11 | IRFZ24NLPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 12 | IRFZ24NLPbF |
INCHANGE |
N-Channel MOSFET |
|