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IRHN8230 |
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| Part Number | IRHN8230 |
| Manufacturer | International Rectifier |
| Description | www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.822A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN7230 IRHN8230 N-CHANNEL MEGA RAD HAR... |
| Features |
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Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight
Absolute Maximum Ratings
Parameter
I D @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Curr... |
| Document |
 IRHN8230 Data Sheet
PDF 606.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRHN8150 |
International Rectifier |
RADIATION HARDENED POWER MOSFET |
|
| 2 | IRHN8450 |
International Rectifier |
(IRHN7450 / IRHN8450) HEXFET TRANSISTOR |
|
| 3 | IRHN2C50SE |
International Rectifier |
N-Channel Transistor |
|
| 4 | IRHN3150 |
International Rectifier |
Radiation Hardened Power MOSFET |
|
| 5 | IRHN4150 |
International Rectifier |
RADIATION HARDENED POWER MOSFET |
|