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DS1258Y |
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| Part Number | DS1258Y |
| Manufacturer | Dallas Semiconducotr |
| Description | A0 to A16 DQ0 to DQ15 CEU CEL WE OE VCC GND - Address Inputs - Data In/Data Out - Chip Enable Upper Byte - Chip Enable Lower Byte - Write Enable - Output Enable - Power (+5V) - Ground DESCRIPTION T... |
| Features |
§ § § § § § § § § § 10-Year Minimum Data Retention in the Absence of External Power Data is Automatically Protected During a Power Loss Separate Upper Byte and Lower Byte ChipSelect Inputs Unlimited Write Cycles Low-Power CMOS Read and Write Access Times as Fast as 70ns Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time Full ±10% Operating Range (DS1258Y) Optional ±5% Operating Range (DS1258AB) Optional Industrial Temperature Range of -40°C to +85°C, Designated IND
PIN ASSIGNMENT
CEU CEL DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 GND DQ... |
| Document |
 DS1258Y Data Sheet
PDF 366.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | DS1258AB |
Dallas Semiconducotr |
128k x 16 Nonvolatile SRAM |
|
| 2 | DS1258W |
Dallas Semiconducotr |
3.3V 128k x 16 Nonvolatile |
|
| 3 | DS1250AB |
Dallas Semiconducotr |
4096k Nonvolatile SRAM |
|
| 4 | DS1250BL |
Dallas Semiconducotr |
4096K Nonvolatile SRAM |
|
| 5 | DS1250W |
Dallas Semiconducotr |
3.3V 4096k Nonvolatile SRAM |
|