NT5DS32M4AW |
Part Number | NT5DS32M4AW |
Manufacturer | Nanya Technology |
Description | The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM. Read or Write command are used to select the bank a... |
Features |
CAS Latency and Frequency
Maximum Operating Frequency (MHz)* DDR333 DDR300 (-6) (-66) 2 133 133 2.5 166 150 * Values are nominal (exact tCK should be used). CAS Latency
• Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for reads and is centeraligned with data for writes • Differential clock inputs (CK and CK) • Four internal banks for concurrent operation • Data mask (DM) for write data • DLL aligns DQ and DQS transitions with... |
Document |
NT5DS32M4AW Data Sheet
PDF 454.50KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NT5DS32M4AT |
Nanya Techology |
(NT5DS16M8AT / NT5DS32M4AT) 128Mb DDR SDRAM | |
2 | NT5DS32M16AF |
Nanya Techology |
(NT5DSxxMxAF) 512Mb DDR SDRAM | |
3 | NT5DS32M16BF |
Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM | |
4 | NT5DS32M16BG |
Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM | |
5 | NT5DS32M16BS |
Nanya Techology |
(NT5DSxxMxBx) 512Mb DDR SDRAM |