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H2N4403 |
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| Part Number | H2N4403 |
| Manufacturer | Hi-Sincerity Mocroelectronics |
| Description | The H2N4403 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4401 • High Power Dissipation: 625mW at 25°C • High DC Current Gain: 100-300 at 150mA ... |
| Features |
• Complementary to H2N4401 • High Power Dissipation: 625mW at 25°C • High DC Current Gain: 100-300 at 150mA • High Breakdown Voltage: 40V Min. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .... -55 ~ +150 °C Junction Temperature ... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ... |
| Document |
 H2N4403 Data Sheet
PDF 53.87KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | H2N4401 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 2 | H2N4124 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 3 | H2N4126 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 4 | H2N3417 |
Hi-Sincerity Mocroelectronics |
NPN SILICON TRANSISTOR |
|
| 5 | H2N3904 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|