H2N4401 |
Part Number | H2N4401 |
Manufacturer | Hi-Sincerity Mocroelectronics |
Description | The H2N4401 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4403 • High Power Dissipation: 625 mW at 25°C • High DC Current Gain: 100-300 at 150mA... |
Features |
• Complementary to H2N4403 • High Power Dissipation: 625 mW at 25°C • High DC Current Gain: 100-300 at 150mA • High Breakdown Voltage: 40 V Min. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.... -55 ~ +150 °C Junction Temperature... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C).... |
Document |
H2N4401 Data Sheet
PDF 53.86KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | H2N4403 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
2 | H2N4124 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
3 | H2N4126 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
4 | H2N3417 |
Hi-Sincerity Mocroelectronics |
NPN SILICON TRANSISTOR | |
5 | H2N3904 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |