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W8NB100 |
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| Part Number | W8NB100 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
M RATINGS
Symbol VDS V DGR V GS ID ID IDM ( • ) P tot dv/dt(1) T stg Tj March 1999 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 1000 1000 ± 30 8 5 32 190 1.52 4 -65 to 150 150 (1) ISD ≤8 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C 1/5 ( •) Puls... |
| Document |
 W8NB100 Data Sheet
PDF 58.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | W8NB80 |
ST Microelectronics |
STW8NB80 |
|
| 2 | W8NB90 |
ST Microelectronics |
STW8NB90 |
|
| 3 | W8NC90Z |
STMicroelectronics |
STW8NC90Z |
|
| 4 | W80NF06 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 5 | W80NF55-06 |
STMicroelectronics |
STW80NF55-06 |
|