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HY27UA081G1M |
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| Part Number | HY27UA081G1M |
| Manufacturer | Hynix Semiconductor |
| Description | of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 4) Add the description of System Interface Using /CE don’t care (Page37) 1) Delete Errata 2) ... |
| Features |
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
FAST BLOCK ERASE
- Block erase time: 2ms (Typ)
NAND INTERFACE
- x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities
STATUS REGISTER ELECTRONIC SIGNATURE
SUPPLY VOLTAGE
Sequential Row Read Option
: HY27UAXX1G1M
- 3.3V device: VCC = 2.7 to 3.6V
1.8V Operation Product : TBD
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
- Boot from NAND support - Automatic Memory Download
- 1.8V device: VCC = 1.7 to 1.95V : HY27SAXX1G1M
Memory Cell Array
- 1056Mbit = 528 Bytes... |
| Document |
 HY27UA081G1M Data Sheet
PDF 729.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HY27UA161G1M |
Hynix Semiconductor |
(HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
|
| 2 | HY27UA1G1M |
Hynix Semiconductor |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
|
| 3 | HY27UF081G2A |
Hynix Semiconductor |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
|
| 4 | HY27UF081G2M |
Hynix Semiconductor |
(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory |
|
| 5 | HY27UF082G2A |
Hynix Semiconductor |
2Gbit (256Mx8bit/128Mx16bit) NAND Flash |
|