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MTP10N10EL |
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| Part Number | MTP10N10EL |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficien... |
| Features |
• Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Pb−Free Package is Available MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous @ TC = 25°C − Continuous @ TC = 100°C − Single Pulse (tp ≤ 10 ms) Total Power Dissipation @ TC = 25°C Derate above 25°... |
| Document |
 MTP10N10EL Data Sheet
PDF 272.76KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTP10N10E |
Motorola |
TMOS POWER FETs |
|
| 2 | MTP10N10E |
ON Semiconductor |
Power MOSFET |
|
| 3 | MTP10N10EL |
Motorola |
TMOS POWER FET |
|
| 4 | MTP10N10 |
Fairchild Semiconductor |
(MTP10N08 / MTP10N10) N-Channel Power MOSFETs |
|
| 5 | MTP10N10 |
Motorola Semiconductor |
(MTP10N08 / MTP10N10) Power Field Effect Transistor |
|