STE110NS20FD |
Part Number | STE110NS20FD |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patented STrip layout coupled with the C... |
Features |
(1) VISO Tstg Tj January 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (AC-RMS) Storage Temperature Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value 200 200 ±20 110 69 440 500 4 25 2500 –65 to 150 150 (1)ISD ≤110A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/°C V/ns V °C °C ( •)Pulse widt... |
Document |
STE110NS20FD Data Sheet
PDF 212.31KB |
Distributor | Stock | Price | Buy |
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1 | STE110NA20 |
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2 | STE110-50T1MI |
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3 | STE1000-60T4MI |
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4 | STE10000-10T4MI |
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5 | STE100A |
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