STE110NS20FD ST Microelectronics N-Channel Power MOSFET Datasheet, en stock, prix

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STE110NS20FD

ST Microelectronics
STE110NS20FD
STE110NS20FD STE110NS20FD
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Part Number STE110NS20FD
Manufacturer STMicroelectronics (https://www.st.com/)
Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patented STrip layout coupled with the C...
Features (1) VISO Tstg Tj January 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (AC-RMS) Storage Temperature Max. Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM Value 200 200 ±20 110 69 440 500 4 25 2500
  –65 to 150 150 (1)ISD ≤110A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/°C V/ns V °C °C (
•)Pulse widt...

Document Datasheet STE110NS20FD Data Sheet
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