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MRF5812G |
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| Part Number | MRF5812G |
| Manufacturer | Advanced Power Technology |
| Description | Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage... |
| Features |
• • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix –Tape and Reel, 500 units R2 suffix –Tape and Reel, 2500 units DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 25ºC Derate above 25ºC 1.25 10 Watts mW/ ºC Advance... |
| Document |
 MRF5812G Data Sheet
PDF 147.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MRF5812 |
ASI |
NPN Silicon RF Microwave Transistor |
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| 2 | MRF5812 |
Advanced Power Technology |
Bipolar Junction Transistor |
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| 3 | MRF581 |
ASI |
NPN SILICON RF TRANSISTOR |
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| 4 | MRF581 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
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| 5 | MRF581 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
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