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MRF5812 |
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| Part Number | MRF5812 |
| Manufacturer | ASI |
| Description | The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. PACKAGE STYLE SO-8 FEATURES: • Low Noise – 2.5 dB @ 500 MHz • Ftau – 5.0 GHz @ 10 V, 75 mA • Cost Effec... |
| Features |
• Low Noise – 2.5 dB @ 500 MHz • Ftau – 5.0 GHz @ 10 V, 75 mA • Cost Effective SO-8 package MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS 200 mA 30 V 15 V 2.5 V 1.25 W @ TC = 25 °C CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE COB FTAU NFmin GNF GU max MSG 2 |S21| TC = 25 °C NONETEST CONDITIONS IC = 1.0 mA IC = 5.0 mA IE = 0.1 mA VCB = 15 V VCE = 2.0 V VCE = 5.0 V VCB = 10 V VCE = 10 V IC = 75 mA IC = 50 mA f = 1.0 MHz f = 1.0 GHz MINIMUM TYPICAL MAXIMUM 30 15 2.5 0.1 0.1 50 1.4 5.0 2.0 13 3.0 200 2.0 UNITS V V V mA mA --pF GHz dB % dB dB dB VCE = 10 V IC = 50 mA f = 500 MHz 15.5... |
| Document |
 MRF5812 Data Sheet
PDF 51.44KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF581 |
ASI |
NPN SILICON RF TRANSISTOR |
|
| 2 | MRF581 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 3 | MRF581 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 4 | MRF581 |
Advanced Power Technology |
RF and Microwave Discrete Low Power Power Transistors |
|
| 5 | MRF5811LT1 |
Motorola |
NPN Silicon High Frequency Transistor |
|