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IRFZ34NL |
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| Part Number | IRFZ34NL |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
| Features |
.0W in a typical surface mount application. The through-hole version (IRFZ34NL) is available for lowprofile applications.
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Tempera... |
| Document |
 IRFZ34NL Data Sheet
PDF 164.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFZ34N |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | IRFZ34N |
International Rectifier |
Power MOSFET |
|
| 3 | IRFZ34N |
ART CHIP |
Power MOSFET |
|
| 4 | IRFZ34NLPBF |
International Rectifier |
Power MOSFET |
|
| 5 | IRFZ34NPBF |
International Rectifier |
HEXFET Power MOSFET |
|