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AS4C1M16F5 |
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| Part Number | AS4C1M16F5 |
| Manufacturer | Alliance Semiconductor |
| Description | 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 VSS DQ16 DQ15 DQ14 DQ13 VSS DQ12 DQ11 DQ10 DQ9 NC LCAS UCAS OE A9 A8 A7 A6 A5 VCC DQ1 DQ2 DQ3 DQ4 VCC DQ5 DQ6 DQ7 DQ8 NC 1 2 3 4... |
| Features |
• Organization: 1,048,576 words × 16 bits • High speed - 45/50/60 ns RAS access time - 20/20/25 ns fast page cycle time - 10/12/15 ns CAS access time • Low power consumption - Active: 880 mW max (AS4C1M16F5-60) - Standby: 11 mW max, CMOS DQ • Fast page mode • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 400 mil, 42-pin SOJ - 400 mil, 44/50-pin TSOP 2 • 5V power supply • Industrial and commercial temperature available Pin arrangement SOJ Vcc DQ1 DQ2 DQ3 '4 Vcc DQ5 DQ6... |
| Document |
 AS4C1M16F5 Data Sheet
PDF 633.55KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AS4C1M16E5 |
Alliance Semiconductor |
5V 1M x 16 CMOS DRAM |
|
| 2 | AS4C1M16S |
Alliance Memory |
1M x 16 bit Synchronous DRAM |
|
| 3 | AS4C1M16S-C |
Alliance Memory |
1M x 16 bit Synchronous DRAM |
|
| 4 | AS4C1M16S-I |
Alliance Memory |
1M x 16 bit Synchronous DRAM |
|
| 5 | AS4C1024 |
Austin Semiconductor |
1M x 1 DRAM |
|