IXFM21N50 |
Part Number | IXFM21N50 |
Manufacturer | IXYS Corporation |
Description | HiPerFETTM Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family OBSOLETE: IXFM21N50 IXFM24N50 Symbol Test Conditions M... |
Features |
• International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Symbol VDSS VGS(th) IGSS IDSS Test Conditions VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 TJ = 25°C TJ = 125°C V 4V ±100 nA 200 µA 1 mA Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mo... |
Document |
IXFM21N50 Data Sheet
PDF 149.12KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFM20N60 |
IXYS Corporation |
Power MOSFET | |
2 | IXFM20N60 |
INCHANGE |
N-Channel MOSFET | |
3 | IXFM24N50 |
IXYS Corporation |
Power MOSFET | |
4 | IXFM10N100 |
IXYS Corporation |
Power MOSFET | |
5 | IXFM10N90 |
ETC |
HiPerFET Power MOSFETs |