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TC220E |
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| Part Number | TC220E |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA Toshiba’s 1 Mbit embedded DRAM core is available for the TC220C and TC220E product families. Each DRAM cell is based on a three transistor structure as shown in Figure 1. This multi-feature D... |
| Features |
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• Power supply: 3.3V ±0.3V • Memory configurations – 128K x 8 bit – 64K x 16 bit – 32K x 32 bit – 16K x 64 bit • Full address without multiplex • Separate data input and output • Read access modes – Random access – EDO/Hyper page mode • Refresh scheme – RAS only refresh – CBR (CAS before RAS) refresh • Performance specification – trc random read cycle: 50 ns – tpc page mode read cycle: 25 ns – Refresh cycle: 256 cycles/ms (@Tj = 85°C) a D . w S a t e e h U 4 t m o .c TC220C/E DRAM Core 0.3µm 3T dRAMASIC Embedded DRAM Benefits Benefits derived from integration of DRAM with logic are: • ... |
| Document |
 TC220E Data Sheet
PDF 144.95KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TC2201 |
Transcom |
Plastic Packaged Low Noise PHEMT GaAs FETs |
|
| 2 | TC220C |
Toshiba |
(TC220C/E) DRAM Core |
|
| 3 | TC220LL |
Allied Components International |
Toroidal Chokes Low Loss |
|
| 4 | TC221 |
ETCTI |
Small-Format CCD Image Sensors (Rev. C) |
|
| 5 | TC2211 |
Transcom |
Plastic Packaged Low Noise PHEMT GaAs FETs |
|