HY27SH164G2M |
Part Number | HY27SH164G2M |
Manufacturer | Hynix Semiconductor |
Description | The HYNIX HY27(U/S)H(08/16)4G2M series is a 512Mx8bit with spare 8Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-ef... |
Features |
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - Manufacturer Code - Device Code SUPPLY VOLTAGE - 3.3V device: VCC = 2.7 to 3.6V : HY27UHXX4G2M CHIP ENABLE DON'T CARE OPTION - Simple interface with microcontroller AUTOMATIC PAGE 0 READ AT POWER-UP OPTION - Boot from NAND support - Automatic Memory Download SERIAL NUMBER OPTION HARDWARE DATA PROTECTION - P... |
Document |
HY27SH164G2M Data Sheet
PDF 367.65KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HY27SH084G2M |
Hynix Semiconductor |
(HY27xHxx4G2M Series) 4G-Bit NAND Flash Memory | |
2 | HY27SA081G1M |
Hynix Semiconductor |
(HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory | |
3 | HY27SA161G1M |
Hynix Semiconductor |
(HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory | |
4 | HY27SAxxx |
Hynix Semiconductor |
(HY27UAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory | |
5 | HY27SF081G2M |
Hynix Semiconductor |
(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory |