HY27SA081G1M - Hynix Semiconductor

HY27SA081G1M (HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 4) Add the description of System Interface Using /CE don’t care (Page37) 1) Delete Errata 2) Change Characteristics 0.4 tCRY Before After 60 + tr 70 + tr tREA@ID Read 35 45 Jun. 01. 2004 Preliminary 15 20 tREH 15 20 May. 14. 2004 Preliminary Apr. 29. 20.

Features

SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities STATUS REGISTER ELECTRONIC SIGNATURE SUPPLY VOLTAGE Sequential Row Read Option : HY27UAXX1G1M - 3.3V device: VCC = 2.7 to 3.6V 1.8V Operation Product : TBD AUTOMATIC PAGE 0 READ AT POWER-UP OPTION - Boot from NAND support - Automatic Memory Download - 1.8V device: VCC = 1.7 to 1.95V : HY27SAXX1G1M Memory Cell Array - 1056Mbit = 528 Bytes.