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P4NA40F1 |
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| Part Number | P4NA40F1 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
| Features |
source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
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Value STP4NA40FI 400 400 ± 30 4 2.5 16 80 0.64 -65 to 150 150 2.8 1.7 16 40 0.32 2000
Unit
V V V A A A W W/o C V
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C C
( •) Pulse width limited by safe operating area November 1996 1/10 STP4NA40/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl The... |
| Document |
 P4NA40F1 Data Sheet
PDF 198.86KB |
| Distributor | Stock | Price | Buy |
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