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www.DataSheet4U.com ® STW8NA60 STH8NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW 8NA60 STH8NA60F I V DSS 600 V 600 V R DS(on) <1 Ω <1 Ω ID 8 A 5 A s s s s s s s TYPICAL RDS(on) = 0.92 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED.
ion W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Unit
STH8NA60FI 600 600 ± 30 V V V 5 3.2 32 60 0.48 4000 A A A W W /o C V
o o
8 5.1 32 150 1.2 -65 to 150 150
C C
(
•) Pulse width limited by safe operating area
October 1998
1/10
www.DataSheet4U.com
STW8NA60-STH8NA60FI
THERMAL DATA
TO-247 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.83 30 0.1 300 ISOWATT 218 2.08
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose
AVALANCHE.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | H8N60 |
Motorola |
MTH8N60 |
|
| 2 | H8N80FI |
STMicroelectronics |
STH8N80FI |
|
| 3 | H8NB90FI |
ST Microelectronics |
STH8NB90FI |
|
| 4 | H8025-126 |
Hamamatsu Photonic Systems |
Sensor Head |
|
| 5 | H8050 |
Shantou Huashan Electronic Devices |
NPN SILICON TRANSISTOR |
|
| 6 | H8050 |
Kexin |
NPN Transistors |
|
| 7 | H8050S |
Shantou Huashan Electronic Devices |
NPN SILICON TRANSISTOR |
|
| 8 | H81MDV3 |
ETC |
Motherboard Setup Manual |
|
| 9 | H81MGV3 |
ETC |
Motherboard Setup Manual |
|
| 10 | H81MHV3 |
ETC |
Motherboard Setup Manual |
|
| 11 | H81MLV3 |
ETC |
Motherboard Setup Manual |
|
| 12 | H8205A |
HI-SINCERITY |
Dual N-Channel Enhancement-Mode MOSFET |
|