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IRFR9120N |
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| Part Number | IRFR9120N |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
| Features |
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
-6.6 -4.2 -26 40 0.32 ± 20 100 -6.6 4.0 -5.0 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V mJ A mJ V/ns °C
Thermal ... |
| Document |
 IRFR9120N Data Sheet
PDF 117.52KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFR9120 |
IRF |
Power MOSFET |
|
| 2 | IRFR9120 |
Intersil |
P Channel Power MOSFET |
|
| 3 | IRFR9120 |
Vishay Siliconix |
Power MOSFET |
|
| 4 | IRFR9120NPBF |
International Rectifier |
Power MOSFET |
|
| 5 | IRFR9120PBF |
International Rectifier |
Power MOSFET |
|