IRFR9120N |
Part Number | IRFR9120N |
Manufacturer | International Rectifier |
Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
Features |
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
-6.6 -4.2 -26 40 0.32 ± 20 100 -6.6 4.0 -5.0 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V mJ A mJ V/ns °C
Thermal ... |
Document |
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Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IRFR9120 |
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Power MOSFET |
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2 | IRFR9120 |
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P Channel Power MOSFET |
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3 | IRFR9120 |
![]() Vishay Siliconix |
Power MOSFET |
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4 | IRFR9120NPBF |
![]() International Rectifier |
Power MOSFET |
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5 | IRFR9120PBF |
![]() International Rectifier |
Power MOSFET |
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