Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applic.
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9120, SiHFR9120)
• Straight Lead (IRFU9120, SiHFU9120)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU.
IRFR9120, IRFU9120 Data Sheet July 1999 File Number 3987.4 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advance.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFR9120N |
International Rectifier |
Power MOSFET | |
2 | IRFR9120NPBF |
International Rectifier |
Power MOSFET | |
3 | IRFR9120PBF |
International Rectifier |
Power MOSFET | |
4 | IRFR9110 |
IRF |
Power MOSFET | |
5 | IRFR9110 |
Intersil |
P Channel Power MOSFET | |
6 | IRFR9110 |
Vishay Siliconix |
Power MOSFET | |
7 | IRFR9110PBF |
International Rectifier |
HEXFET Power MOSFET | |
8 | IRFR9010 |
Samsung Electronics |
(IRFR9010/14 / IRFU9010/14) P-Channel Power MOSFET | |
9 | IRFR9010 |
International Rectifier |
P-Channel Transistor | |
10 | IRFR9010 |
Vishay |
Power MOSFET | |
11 | IRFR9012 |
International Rectifier |
P-Channel Transistor | |
12 | IRFR9014 |
IRF |
Power MOSFET |