MTD2N40E - Motorola

MTD2N40E TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET DPAK for Surface Mount Designer's MTD2N40E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche and switch efficiently. This new h.

Features

Temperature
• Surface Mount Package Available in 16 mm, 13
  –inch/2500 Unit Tape & Reel, Add
  –T4 Suffix to Part Number
• Replaces MTD1N40E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –Source Voltage Drain
  –Gate Voltage (RGS = 1.0 MΩ) Gate
  –Source Voltage — Continuous Gate
  –Source Voltage — Non
  –Repetitive (tp ≤ 10 ms) Drain Current — Continuous @ TC = 25°C Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C, when mounted to minimum recommended pad size Operating and S.