IRGPC20U IRF INSULATED GATE BIPOLAR TRANSISTOR Datasheet, en stock, prix

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IRGPC20U

IRF
IRGPC20U
IRGPC20U IRGPC20U
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Part Number IRGPC20U
Manufacturer IRF
Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requi...
Features
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 6.5A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Rati...

Document Datasheet IRGPC20U Data Sheet
PDF 258.24KB
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