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IRGPC30S |
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| Part Number | IRGPC30S |
| Manufacturer | IRF |
| Description | Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requi... |
| Features |
• Switching-loss rating includes all "tail" losses • Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 600V VCE(sat) ≤ 2.2V @VGE = 15V, IC = 18A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ra... |
| Document |
 IRGPC30S Data Sheet
PDF 253.90KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRGPC30F |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRGPC30FD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRGPC30M |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRGPC30MD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRGPC30U |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|