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IRFS614B |
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| Part Number | IRFS614B |
| Manufacturer | Fairchild |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o... |
| Features |
• • • • • • 2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRF614B 250 2.8 1.8 8.5 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS614B 2.8 * 1.8 * 8.5 * 45 2.8 4.0 5.5 Units V A... |
| Document |
 IRFS614B Data Sheet
PDF 855.44KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFS610A |
Inchange Semiconductor |
N-Channel MOSFET |
|
| 2 | IRFS610A |
Fairchild Semiconductor |
Power MOSFET |
|
| 3 | IRFS610B |
Fairchild |
200V N-Channel MOSFET |
|
| 4 | IRFS620A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | IRFS620A |
Fairchild Semiconductor |
Power MOSFET |
|