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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±30 V V ID Drain Current-Continuous 2.5 A IDM Drain Current-Single Pluse 10 A PD Total Dissipation @TC=25℃ 22 W TJ Max. Operating Juncti.
·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
200 ±30
V V
ID Drain Current-Continuous
2.5 A
IDM Drain Current-Single Pluse
10 A
PD Total Dissipation @TC=25℃
22 W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SY.
IRFS610A - Fairchild Semiconductor
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFS610B |
Fairchild |
200V N-Channel MOSFET |
|
| 2 | IRFS614B |
Fairchild |
250V N-Channel MOSFET |
|
| 3 | IRFS620A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | IRFS620A |
Fairchild Semiconductor |
Power MOSFET |
|
| 5 | IRFS620B |
Fairchild |
200V N-Channel MOSFET |
|
| 6 | IRFS624A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 7 | IRFS624B |
Fairchild |
250V N-Channel MOSFET |
|
| 8 | IRFS630 |
TAITRON |
200V/9A POWER MOSFET |
|
| 9 | IRFS630 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |
|
| 10 | IRFS630 |
Samsung |
N-Channel Power MOSFET |
|
| 11 | IRFS630A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 12 | IRFS630A |
Fairchild |
Advanced Power MOSFET |
|