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MTP60N05HDL |
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| Part Number | MTP60N05HDL |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP60N05HDL/D Product Preview HDTMOS E-FET.™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high–c... |
| Features |
ES 50 VOLTS RDS(on) = 0.014 OHM
™
D
G CASE 221A –06, Style 5 TO –220AB S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Drain –to –Gate Voltage (RGS = 1.0 MΩ) Gate –to –Source Voltage — Continuous — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 mH, RG = 25 Ω) Thermal Resistance — Junction to Case — Junct... |
| Document |
 MTP60N05HDL Data Sheet
PDF 166.09KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTP60N06HD |
Motorola |
TMOS POWER FET |
|
| 2 | MTP6N10 |
Motorola |
POWER FIELD EFFECT TRANSISTOR |
|
| 3 | MTP6N60 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 4 | MTP6N60E |
Motorola |
TMOS POWER FET |
|
| 5 | MTP6N60E |
ON Semiconductor |
Power Field Effect Transistor |
|