MTP3N55 - STI

MTP3N55 High Voltage Power MOSFET

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 TYPE: MTP3N55 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain – Source Voltage Drain – Gate Voltage Drain Current – Continuous Drain Current – Pulse.

Features

Drain Source OnVoltage Input Capacitance Output Capacitance Reverse Transfer Capacitance rDS(on) gFS VDS(on) VDS(on) Ciss Coss Crss VDS = 25V, f = 1 MHz ID = 1.5A, VGS = 10V, ID = 1.5A, VDS = 15V, ID = 3.0A VGS = 10V ID = 1.5A, VGS = 10V TJ = 100°C Min 550 2.0 1.5 Typ Max Unit Vdc Vdc nA mA mA Adc 4.5 4.0 100 0.2 1.0 2.5 1.5 9.0 7.5 Ohms mhos Vdc Vdc Vdc 1000 pF 300 80 pF pF Page 1 of 2 TYPE:MTP3N55 Drain Source Diode Characteristics Forward On Voltage Reverse Recovery Time Forward Turn-On Time Total Gate Charge Gate
  – Source Charge Gate
  – Drain Charge VDS=440V, ID=3.0A, VDS=10V IS .