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SPD50N06S2L-13 |
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| Part Number | SPD50N06S2L-13 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare... |
| Features |
n - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.69 max. 1.1 100 75 50
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.2
Values typ. 1.6 max. 2
Unit
V
Gate threshold voltage, VGS = V DS
ID=80µA
Zero gate voltage drain current
V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C
µA 0.01 1 1 11.8 9.4 1 100 100 16.7 12.7 nA mΩ
Gate... |
| Document |
 SPD50N06S2L-13 Data Sheet
PDF 264.73KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPD50N06S2L-13 |
Infineon |
Power Transistor |
|
| 2 | SPD50N06S2-14 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 3 | SPD50N03S2 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPD50N03S2-07 |
Infineon Technologies |
Power-Transistor |
|
| 5 | SPD50N03S2-07G |
Infineon |
Power-Transistor |
|