SPD30N06S2L-13 |
Part Number | SPD30N06S2L-13 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare... |
Features |
Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.69 max. 1.1 100 75 50
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.2
Values typ. 1.6 max. 2
Unit
V
Gate threshold voltage, VGS = V DS
ID=80µA
Zero gate voltage drain current
V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C
µA 0.01 1 1 12.5 9.7 1 10... |
Document |
SPD30N06S2L-13 Data Sheet
PDF 264.83KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPD30N06S2L-23 |
Infineon Technologies |
OptiMOS Power-Transistor | |
2 | SPD30N06S2-15 |
Infineon Technologies |
OptiMOS Power-Transistor | |
3 | SPD30N06S2-23 |
Infineon Technologies |
OptiMOS Power-Transistor | |
4 | SPD30N03 |
Infineon Technologies |
SIPMOS Power Transistor | |
5 | SPD30N03L |
Siemens Semiconductor |
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