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SPB04N60C3 |
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| Part Number | SPB04N60C3 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Final data SPP04N60C3, SPB04N60C3 SPA04N60C3 VDS @ Tjmax RDS(on) ID 650 0.95 4.5 V Ω A Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Period... |
| Features |
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature
-55...+150
Page 1
2003-10-02
Final data Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, I D = 4.5 A, Tj = 125 °C
SPP04N60C3, SPB04N60C3 SPA04N60C3
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD versio... |
| Document |
 SPB04N60C3 Data Sheet
PDF 415.48KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPB04N60C2 |
Infineon |
Cool MOS Power Transistor |
|
| 2 | SPB04N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 3 | SPB04N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPB04N60S5 |
Infineon |
Cool MOS Power Transistor |
|
| 5 | SPB04N60S5 |
INCHANGE |
N-Channel MOSFET |
|