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BB302M |
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| Part Number | BB302M |
| Manufacturer | Hitachi |
| Description | BB302M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-572 A (Z) 2nd. Edition September 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise... |
| Features |
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain • Note 1 Marking is “BW –”. • Note 2 BB302M is individual type number of HITACHI BBFET. BB302M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 –0 Gate2 to... |
| Document |
 BB302M Data Sheet
PDF 61.89KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BB302C |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
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| 2 | BB301 |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
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| 3 | BB301 |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
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| 4 | BB301C |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
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| 5 | BB301M |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
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