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BB102C |
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| Part Number | BB102C |
| Manufacturer | Hitachi |
| Description | BB102C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-588 (Z) 1st. Edition November 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise ch... |
| Features |
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain • Note 1 Marking is “BW –”. • Note 2 BB302C is individual type number of HITACHI BBFET. BB102C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipati... |
| Document |
 BB102C Data Sheet
PDF 62.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BB102M |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
|
| 2 | BB101C |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
|
| 3 | BB101M |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
|
| 4 | BB105 |
Iskra Semic |
Silicon Planar Signal Diodes |
|
| 5 | BB105A |
Tele Fun Ken |
(BB105A/B/G) Diodes |
|