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SPB04N60C2 |
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| Part Number | SPB04N60C2 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated •... |
| Features |
dt=100A/µs, Tjmax =150°C
A V/ns V W
dv/dt
VGS VGS Ptot
Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C
50
31
Operating and storage temperature
Page 1
Tj , Tstg
-55...+150
°C
2002-08-12
Final data Thermal Characteristics Parameter Characteristics
SPP04N60C2, SPB04N60C2 SPA04N60C2
Symbol min.
Values typ. max.
Unit
Thermal resistance, junction - case Thremal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling ... |
| Document |
 SPB04N60C2 Data Sheet
PDF 164.28KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPB04N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 2 | SPB04N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 3 | SPB04N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPB04N60S5 |
Infineon |
Cool MOS Power Transistor |
|
| 5 | SPB04N60S5 |
INCHANGE |
N-Channel MOSFET |
|