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PNZ109L |
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| Part Number | PNZ109L |
| Manufacturer | Panasonic Semiconductor |
| Description | Phototransistors PNZ109L Silicon NPN Phototransistor ø4.6±0.15 Unit : mm Glass lens For optical control systems Features High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 100 lx) 12.7 min. 6.3±0.3 ... |
| Features |
High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 100 lx)
12.7 min. 6.3±0.3
Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : λp = 900 nm (typ.) Fast response : tr = 5 µs (typ.) Long lifetime, high reliability
3-ø0.45±0.05 2.54±0.25
0 0± 1. .2 .1 5
3˚ 45±
1.
0± 0
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature S... |
| Document |
 PNZ109L Data Sheet
PDF 46.18KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PNZ109CL |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 2 | PNZ109F |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|
| 3 | PNZ102F |
Panasonic Semiconductor |
Silicon NPN Phototransistors |
|
| 4 | PNZ107F |
Panasonic Semiconductor |
Silicon NPN Phototransistors |
|
| 5 | PNZ108CL |
Panasonic Semiconductor |
Silicon NPN Phototransistor |
|