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NE5537 |
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| Part Number | NE5537 |
| Manufacturer | Philipss |
| Description | The NE5537 monolithic sample-and-hold amplifier combines the best features of ion-implanted JFETs with bipolar devices to obtain high accuracy, fast acquisition time, and low droop rate. This device i... |
| Features |
of ion-implanted JFETs with bipolar devices to obtain high accuracy, fast acquisition time, and low droop rate. This device is pin-compatible with the LF198, and features superior performance in droop rate and output drive capability. The circuit shown in Figure 1 contains two operational amplifiers which function as a unity gain amplifier in the sample mode. The first amplifier has bipolar input transistors which give the system a low offset voltage. The second amplifier has JFET input transistors to achieve low leakage current from the hold capacitor. A unique circuit design for leakage curr... |
| Document |
 NE5537 Data Sheet
PDF 103.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE5531079A |
California Eastern Labs |
SILICON POWER MOS FET |
|
| 2 | NE5531079A |
Renesas |
7.5V OPERATION SILICON RF POWER LDMOS FET |
|
| 3 | NE5532 |
Philips |
Internally-compensated dual low noise operational amplifier |
|
| 4 | NE5532 |
Fairchild Semiconductor |
Dual Operational Amplifier |
|
| 5 | NE5532 |
ON Semiconductor |
Internally Compensated Dual Low Noise Operational Amplifier |
|