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Features
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s Limits Min 806 3 30 Max 870 Unit MHz W % dBc
VDD=7.2V, VGG=3.5V, Pin=50mW ZG=ZL=50Ω, VDD=5-9.2V, Load VSWR <4:1 VDD=9V, Pin=50mW, PO=3W (VGG Adjust), ZL=20:1
-28 4 No parasitic oscillation No degradation or destroy
Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97
MITSUBISHI RF POWER MODULE
M68757L
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 7 6 5 4 3 2 ρin PO ηT 70 60 50 40 30 1.0 f=806MHz VDD=7.2V VGG=3.5V ZG=ZL=50Ω 0.1 1 10 INPUT POWER Pin...
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M68757L Data Sheet
